U. Neuschaefer-Rube, W. Holzapfel, F. Wirth
TARGET ANALYSIS BY FOCUSING ELLIPSOMETRY
Reflection ellipsometry is a proven optical measurement method often used to measure film thicknesses. Classical ellipsometers use an unfocused measurement beam, which causes a low lateral resolution in the order of 1 mm. To determine microstructures ellipsometrically (e.g. in the semiconductor industry), an improved lateral resolution in the order of micrometers is essential. We discuss the problems of focusing ellipsometry, occurring when a reflection ellipsometer is used to measure surface characteristics (topography, material). Different measurement setups are analyzed and compared. Simulating calculations show that particularly the measured values of the phase difference Δ are influenced by beam focusing. This leads to errors particularly in the attenuation index k of the surface material.