A. Assaf, M. Zeghouane, J.-R. Plaussu, S. Cavalagliob, B. Pelissier, F. Bassani, I. Canero-Infante, T. Fiorido, M. Bendahan, S. Monfray, B. Salem, B. Vilquin, A. Souifi
Optimization of SnO2 thin films for low temperature NO2 sensors applications
In this work, a high-performance n-type semiconductor gas sensor based on undoped-SnO2 thin films deposited by a conventional radio- frequency (RF) – magnetron sputtering process was successfully fabricated. The structure, morphology, and chemical composition of the sensing material were investigated using X-ray diffraction (XRD), Atomic Force Microscopy (AFM), and X-ray photoelectron spectroscopy (XPS) respectively. The end results show that the thin film has a poly- crystalline structure with the presence of oxygen vacancies. The resistive sensor architecture has been simulated using TCAD SILVACO software’s in order to optimize the geometry for sensor response optimization.
In this study, undoped-SnO2 resistive gas sensor exhibits compelling sensing performance for detecting 3 ppm of NO 2 mixed with dry air at low operating temperature, around 100°C. 3 ppm represents the maximum level of NO2 concentration beyond which short-term exposure presents a risk to human health or environmental degradation. Lower concentrations were also investigated in our study and the lowest NO2 concentration evaluated is about 0.25 ppm.