INTERNAL DEFECT DETECTION IN THE VICINITY OF SI WAFER SURFACE USING EVANESCENT WAVE |
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| Ryusuke Nakajima, Takashi Miyoshi, Yasuhiro Takaya, Satoru Takahashi |
- Abstract:
- In order to reduce and control yield loss in the fabrication process of next generation ULSI devices, nano-defects inspection technique for polished Silicon (Si) wafer surface becomes more essential. This paper discusses the new optical nano-defects detection method, which is applicable to the silicon wafer surface inspection technique for next-generation semiconductors.
In our proposed method, the evanescent light is emerged on the wafer surface with total internal reflection (TIR) of infrared (IR) laser at the Si-air interface. And by scanning the surface where is evanescent light emerging with very shaped fibre probe, it enables to detect nanometre scale defects in the vicinity of Si wafer surface without diffraction limit to resolution. To verify the feasibility of this method, both of the computer simulations based on Maxwell’s equations and the several fundamental experiments are performed. FDTD simulation shows that the proposed method is effective to detect nano-defects existing not only on Si surface but also in the subsurface with high sensitivity. And also the fundamental experiments show the validity of this method by demonstrating nano-defects detections of subsurface as well as surface. - Keywords:
- silicon wafer, internal defect, evanescent wave
- Download:
- PWC-2003-TC14-013.pdf
- DOI:
- -
- Event details
- Event name:
- XVII IMEKO World Congress
- Title:
Metrology in the 3rd Millennium
- Place:
- Dubrovnik, CROATIA
- Time:
- 22 June 2003 - 28 June 2003